查看“磁共振小组/磁共振兼容/Predicting in vivo MRI Gradient-Field Induced Voltage Levels on Implanted Deep Brain Stimulation Systems Using Neural Networks”的源代码

{{文章推荐|Reason=运用神经网络的方法预测了植入AIMD患者人体的GIV大小|Journal=Frontiers|PubYear=2020|DOI=10.3389/fnhum.2020.00034|Category_=研究性工作|Domain=磁共振兼容|RecomBy=徐博亚|RecomGrp=磁共振小组|ReviewBy=姜老师|Abstract=Introduction: MRI gradient-fields may induce
extrinsic voltage between electrodes and conductive neurostimulator enclosure
of implanted deep brain stimulation (DBS) systems, and may cause unintended
stimulation and/or malfunction. Electromagnetic (EM) simulations using detailed
anatomical human models, therapy implant trajectories, and gradient coil models
can be used to calculate clinically relevant induced voltage levels.
Incorporating additional anatomical human models into the EM simulation library
can help to achieve more clinically relevant and accurate induced voltage
levels, however, adding new anatomical human models and developing implant
trajectories is time-consuming, expensive and not always feasible. Methods: MRI
gradient-field induced voltage levels are simulated in six adult human anatomical
models, along clinically relevant DBS implant trajectories to generate the dataset.
Predictive artificial neural network (ANN) regression models are trained on the
simulated dataset. Leave-one-out cross validation is performed to assess the performance
of ANN regressors and quantify model prediction errors. Results: More than
180,000 unique gradient-induced voltage levels are simulated. ANN algorithm
with two fully connected layers is selected due to its superior generalizability
compared to support vector machine and tree-based algorithms in this particular
application. The ANN regression model is capable of producing thousands of
gradient-induced voltage predictions in less than a second with mean-squared-error
less than 200 mV. Conclusion: We have integrated machine learning (ML) with
computational modeling and simulations and developed an accurate predictive
model to determine MRI gradientfield induced voltage levels on implanted DBS
systems.|DetaialsDM=梯度感应电压评估与预测}}